| PART |
Description |
Maker |
| DS1270AB DS1270AB-100 DS1270AB-100IND DS1270AB-70 |
(DS1270AB/Y) 16M Nonvolatile SRAM
|
DALLAS[Dallas Semiconductor]
Dallas Semiconducotr
MAXIM - Dallas Semiconductor
|
| LRS1331 |
Stacked Chip 16M Flash Memory and 4M SRAM
|
SHARP[Sharp Electrionic Components]
|
| SST34HF1601C |
(SST34HF16xxx) 16M-bit Concurrent SuperFlash SRAM Combo Memory
|
Silicon Storage Technology
|
| SST34HF1621S SST34HF1621C SST34HF1641C |
(SST34HF16xxx) 16M-bit Concurrent SuperFlash + SRAM Combo Memory
|
Silicon Storage Technology
|
| SST34HF1621A |
(SST34HF1621A / SST34HF1641A / SST34HF1681) 16M-bit Concurrent SuperFlash SRAM Combo Memory
|
Silicon Storage Technology
|
| HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG
Infineon Technologies AG
|
| KMM366F1600BK2 KMM366F1680BK2 |
16M x 64 DRAM DIMM(16M x 64 动RAM模块)
16M x 64 DRAM DIMM(16M x 64 ?ㄦ?RAM妯″?)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| BS616LV1611 BS616LV1611FIP70 BS616LV1611FC BS616LV |
Asynchronous 16M(1Mx16) bits Static RAM
From old datasheet system
Very Low Power/Voltage CMOS SRAM 1M X 16 bit 非常低功电压CMOS SRAM00万16
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| TC58128DC |
128M Bit (16M×8Bits ) CMOS NAND EEPROM(16M×8CMOS与非EEPROM)
|
Toshiba Corporation
|
| IBM13M16734JCA |
16M x 72 1 Bank Registered/Buffered SDRAM Module(16M x 72 1组寄缓冲同步动态RAM模块16M x 72高速存储器阵列结构
|
IBM Microeletronics
|
| MC-4516CD646 |
16M-Word By 64-BIT Dynamic RAM Module(16M×64位动态RAM模块)
|
NEC Corp.
|
